Characterization of crystalline structure and morphology of Ga2O3 thin film grown by MOCVD technique
| Autor: | Kjapsna, Alvars, Dimitrocenko, Lauris, Tale, Ivars, Trukhin, Anatoly, Ignatans, Reinis, Grants, Rolands |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
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| Popis: | Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process. Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART² |
| Databáze: | OpenAIRE |
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