Analysis of a resonant tunneling diode based on graphene nanoribbons with ideal edges
| Autor: | Mihaljević, Mirko |
|---|---|
| Přispěvatelé: | Poljak, Mirko |
| Jazyk: | chorvatština |
| Rok vydání: | 2020 |
| Předmět: |
nanovrpce
Greenova funkcija TEHNIČKE ZNANOSTI. Računarstvo TEHNIČKE ZNANOSTI. Elektrotehnika graphene Rezonantna tunelska dioda Green's function grafen 2D materials TECHNICAL SCIENCES. Electrical Engineering TECHNICAL SCIENCES. Computing 2D materijali silicen Greenova funkcija nanovrpce kvantni transport Resonant tunneling diodes silicene quantum transport nanoribbons |
| Popis: | Grafen je 2D materijal s odličnim elektronskim i transportnim svojstvima, ali mu je mana što nema zabranjeni pojas. Jedan od načina dobivanja zabranjenog pojasa je oblikovanje grafena u nanovrpce (GNR) koje se dobiju ograničavanjem širine na nekoliko nanometara. Kombiniranjem grafenskih nanovrpci različitih širina mogu se realizirati lateralne rezonantne tunelske diode. Za analizu ove strukture korišten je kvantni transport (NEGF) s dva kontakta koja su predstavljena pomoću dva polubeskonačna područja. Razmatrala se promjena strujno-naponskih karakteristika GNR RTD-ova u ovisnosti o TQW i TB, te usporedba karakteristika sa SiNR RTD-ovima. Pokazano je da se povećavanjem duljine jame i barijera mogu dobiti bolje karakteristike kod GNR RTD-ova u odnosu na one kod SiNR RTD-ova. Graphene is a 2D material with excellent electronic and transport properties, but its disadvantage is that it does not have a bandgap. One of the approaches for inducing a bandgap is by shaping graphene into nanoribbons (GNR) which are obtained by limiting the width to a few nanometers. By combining graphene nanoribbons of different widths, resonant tunneling diodes can be realized. Quantum transport (NEGF) with two contacts represented by two semi-infinite domains was used to analyze the GNR RTD structures. The change of GNR RTD performance characteristics depending on TB and TQW was analyzed, as well as the comparison with SiNR RTD. It has been shown that by increasing the well and barrier length, better device properties can be obtained with GNR RTDs in comparison to SiNR RTDs. |
| Databáze: | OpenAIRE |
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