Static and switching characteristics of 10 kV-class Silicon Carbide Transistors and Darlingtons

Autor: Asllani, Besar, Bevilacqua, Pascal, Morel, Hervé, Planson, Dominique, Phung, Luong Viet, Choucoutou, Beverley, Lagier, Thomas, Mermet-Guyennet, Michel
Přispěvatelé: SuperGrid Institute SAS, Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩
ISSN: 0255-5476
1662-9760
DOI: 10.4028/www.scientific.net/MSF.1004.923⟩
Popis: International audience; This paper reports the device design, fabrication and characterisation of 10 kV-class BJT. Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a βMax of 69. Double pulse tests reveal state of the art switching with very sharp dV/dt and di/dt. Turn-on is operated at less than 100 ns for an EON lower than 4mJ, whereas the turn-off takes longer times due to tail current resulting in EOFF of 17.2 mJ and 50 mJ for the single BJT and Darlington respectively when operated at high current density. Excellent parallelisation have been achieved.
Databáze: OpenAIRE
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