Experimental Demonstration of gm/ID Based Noise Analysis
| Autor: | Maris Ferreira, Pietro, Ou, Jack |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Sonoma State University [Rohnert Park] |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Circuits and Systems Circuits and Systems, 2014, 5 (4), pp.69-75 |
| Popis: | International audience; Recent studies using BSIM3 models have suggested that noise depends on the transconductance- to-drain ratio (gmID) of a transistor. However, to the best of our knowledge, no experimental gmID result demonstrating gmID dependent noise previously observed in simulation is available in the literature. This paper examines the underlying principles that make it possible to analyze noise using gmID based noise analysis. Qualitative discussion of normalized noise is presented along with experimental results from a 130 nm CMOS process. A close examination of the experimental results reveals that the device noise is width independent from 1 Hz to 10 kHz. Moreover, noise increases as gmID is reduced. The experiment observation that noise is width independent makes it possible for circuit designers to generate normalized parameters that are used to study noise intuitively and accurately. |
| Databáze: | OpenAIRE |
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