Designing Carrier Selective Perovskite on Silicon 3T Tandems
| Autor: | Connolly, J.P., Kleider, Jean-Paul, Gueunier-Farret, Marie-Estelle, DJEBBOUR, Zakaria, Alvarez, J, Mencaraglia, Denis, Nazeeruddin, M. K., Mihailetchi, Valentin, Baranek, Philippe, Schulz, Philip, Isabella, Olindo |
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| Přispěvatelé: | Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU), Swiss Federal Institute of Technology, Ecole Polytechnique Fédérale de Lausanne (EPFL), International Solar Energy Research Center (ISE Konstanz e.V.), Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Economie, Fonctionnement et Etudes des Systèmes Électriques (EDF R&D EFESE), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), Centre National de la Recherche Scientifique (CNRS), Delft University of Technology (TU Delft), WIP |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Silicon
Multijunction Novel device Author for correspondence : jamesconnolly@geepscentralesupelecfr [SPI.NRJ]Engineering Sciences [physics]/Electric power [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Perovskite High efficiency [SPI.MAT]Engineering Sciences [physics]/Materials |
| Zdroj: | 36th European Photovoltaic Solar Energy Conference and Exhibition 36th European Photovoltaic Solar Energy Conference and Exhibition, WIP, Sep 2019, Marseille, France. pp.779, ⟨10.4229/EUPVSEC20192019-3BV.2.60⟩ |
| DOI: | 10.4229/EUPVSEC20192019-3BV.2.60⟩ |
| Popis: | International audience; We explore design criteria for a new multijunction solar cell concept, the three terminal selective band offset barrier solar cell (3T-SBOB). The 3T-SBOB reaches tandem solar efficiencies without suffering from series current constraints of two terminal designs, and without suffering from grid alignement issues of four terminal designs. It consists of a low bandgap silicon interdigitated back contact solar cell, connected to a high bandgap top cell by a selective band offset barrier (SBOB). The SBOB allows transport of only one type of charge carrier, leading to independent quasi-Fermi level separations in top and bottom cells under illumination It reaches tandem efficiencies with three terminals and with technical advantages over 2T and 4T devices. This paper reports results of the design of the 3T-SBOB device. Two candidate materials for this critical ETL and SBOB material are SnO2 and PC(71)BM. This paper presents these preliminary materials studies and resulting device structures which will be evaluated in a forthcoming H2020 Solar-ERANET project (BOBTANDEM) the kick-off of which coincides with this conference. |
| Databáze: | OpenAIRE |
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