Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation
| Autor: | Opanasiuk, Anatolii Serhiiovych, Kosiak, Volodymyr Volodymyrovych, Znamenshchykov, Yaroslav Volodymyrovych, Gnatenko, Yu.P., Čerškus, Aurimas, Grase, L., Medvids, A., Mezinskis, G. |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
оптична якість
II–VI кристалы напівпровідникові тонкі плівки Point and extended defects низкотемпературная фотолюминесценция Semiconductor thick films оптическое качество II–VI кристали полупроводниковые толстые пленки Low-temperaturephotoluminescence low-temperature photoluminescence напівпровідникові товсті плівки низькотемпературна фотолюмінесценція точечные и линейные дефекты точкові і лінійні дефекти CdZnTe полупроводниковые тонкие пленки II–VI crystals optical quality |
| Popis: | Polycrystalline Cd1 xZnxTe thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd1 xZnxTe films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. This work was supported by Grant State Fund for Fundamental Research (project NGP/F61/087) and by the Ministry of Education and Science of Ukraine (Grant no. 0110U001151) by the National Academy of Sciences of Ukraine (Grants nos. BС-157-15 and B-146-15). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|