The influence of a Si-doped layer in an AlGaAs/GaAs heterostructure on the damage introduced by CH4/H2/Ar ECR plasma etching
| Autor: | Hassel, van, J.G., Es, van, C.M., Nouwens, P.A.M., Maahury, J.H., Wellen, J.S. |
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| Přispěvatelé: | Photonic Integration, Photonics and Semiconductor Nanophysics |
| Jazyk: | angličtina |
| Rok vydání: | 1994 |
| Zdroj: | Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society, 123-131 STARTPAGE=123;ENDPAGE=131;TITLE=Proc. 21st State of the Art Progr. on Compound Semiconductors, SOTAPOCS XXI, 186th Meeting of the Electrochemical Society Semiconductor and Integrated Optoelectronics Conference, SIOE '95 |
| Databáze: | OpenAIRE |
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