Band bending at In-rich InGaN surfaces
| Autor: | Bailey, L.R., King, P.D.C., Veal, T.D., McConville, Chris F., Pereiro Viterbo, Juan, Grandal Quintana, Javier, Sánchez García, Miguel Angel, Muñoz Merino, Elias, Calleja Pardo, Enrique |
|---|---|
| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics, ISSN 0021-8979, 2008-01, Vol. 104, No. 11 Archivo Digital UPM Universidad Politécnica de Madrid |
| Popis: | The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1−xN alloys with a composition range of 0.39 ≤ x ≤ 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson’s equation within a modified Thomas–Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0×1012 to 1.5×1013 cm−2. The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|