Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors
| Autor: | Plinio, Bau, Cousineau, Marc, Cogo, Bernardo, RICHARDEAU, Frédéric, Sébastien, Vinnac, Flumian, Didier, Rouger, Nicolas |
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| Přispěvatelé: | Convertisseurs Statiques (CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, IRT Saint Exupéry - Institut de Recherche Technologique, Convertisseurs Statiques (LAPLACE-CS) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩ |
| Popis: | International audience; This paper presents an AGD (active gate driver) implemented with a low voltage CMOS technology to control the dv/dt sequence of low voltage (100V) and high voltage (650V) GaN power transistors. Such an AGD can control and reduce the dv/dt of fast switching GaN devices with a reduced impact on switching losses. In the case of both low voltage and high voltage GaN fast switching transistors, such an AGD must have a total response time lower than 1ns. Therefore, introducing a feedback loop to control the dv/dt requires a specific design with a very high bandwidth (550MHz). Moreover, probing the vDS voltage and its derivative is quite challenging, as the voltage level is higher than the low voltage gate driver supply. The purpose of this work is to optimize a low voltage CMOS AGD with fully integrated functions, and implement such a solution in GaN-based power converters. Keywords-Active gate driver, GaN, switching analysis, dv/dt, EMI, power electronics, ASIC for power ic. |
| Databáze: | OpenAIRE |
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