Displacement damage effects in InGaAs photodiodes produced by electrons, protons and neutrons irradiations
| Autor: | Inguimbert, Christophe, Nuns, Thierry, Barbero, Juan, Moreno, Juan, Ducret, Samuel, Neldecu, Alexandru, Galmander, Bjorn, Passoth, Elke |
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| Přispěvatelé: | ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, ALTER Technology, LYNRED, The Sainsbury Laboratory [Norwich] (TSL) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | European Conference on Radiation and its Effects on Components and Systems (RADECS) 2019 European Conference on Radiation and its Effects on Components and Systems (RADECS) 2019, Sep 2019, Montpellier, France |
| Popis: | International audience; A set of different InGaAs photodiodes coming from different manufacturers has been irradiated with electrons from 0.5 MeV up to 20 MeV, with protons of 60 MeV, 100 MeV and 170 MeV and with an atmospheric-like neutrons spectrum. Depending on the type of incident particles and energy, the deposited damage dose goes from ~5 10 +06 MeV/g up to 5 10 +09 MeV/g. The dark current damage factor has been extracted from measurements made at different fluence levels. The dark current has been measured a short time after irradiation and two months later to evaluate any possible annealing processes. The damage factor measured after ~two months has been scaled according to the Non Ionizing Energy Loss (NIEL). The reliability of the NIEL scaling law is discussed for InGaAs material. |
| Databáze: | OpenAIRE |
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