Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD

Autor: BRIMONT, Christelle, DOYENNETTE, Laetitia, Tabataba-vakili, Farsane, Roland, I., El Kurdi, M., Checoury, X., Sauvage, S., Paulillo, B, Colombelli, R, RENNESSON, S., Frayssinet, Eric, Brault, Julien, Damilano, B., Duboz, J. y., Semond, F., Gayral, B., Boucaud, P., GUILLET, Thierry
Přispěvatelé: Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-17-CE08-0043,MILAGAN,Laser microdisque en (Al,Ga,In)-N injecté électriquement(2017), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Université Nice Sophia Antipolis (... - 2019) (UNS)
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: International Workshop on Nitride Semiconductors 2018 (IWN 2018)
International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan
Popis: International audience; The integration of nitride semiconductors on a silicon platform is a very promising field for nanophotonic applications in the UV-blue spectral range. Efficient sources are a main topic that can be achieved by compact microlasers based on GaN/AlN and InGaN/GaN multiple quantum wells (MQW) grown on a silicon substrate. The epitaxy of these structures is performed by the controlled-growth of an AlN and GaN buffer layers to prevent from dislocations. To obtain versatile and efficient micro-emitters, the technological development of micro-resonator has been improved for nitride MQW micro-disks on silicon. This unique Nitride-on-Silicon platform has been allowed by releasing the micro-disk membrane with selective under-etching of the silicon substrate. For integrated photonics applications, these micro-disks can be electrically powered but also coupled to optical waveguides to a better extract of the emission. We have already shown that we can reach a few thousand for the quality factor of the microdisks with nitride MQW grown by MBE1 but also in nitride-on-silicon photonic crystal cavities2. The laser emission of the microdisks under optical pumping and at room temperature was obtained over a broad spectral range extending from 275 nm to 470 nm1.Here we investigate the physics of the micro-resonators with InGaN/GaN MQW grown by MOCVD. Photoluminescence (PL) emission is probed under pulsed optical pumping at 266 nm. Laser emission is reached at room temperature at 390 nm. We focus on the gain properties of the InGaN/GaN MQW active layer. We have investigated the temperature dependence of the microlaser threshold vs temperature. We show that the typical T0 for these microlaser is elevated (T0=77K), meaning that the temperature dependence around room temperature is reduced. We also model the spectra to extract the carrier density at threshold. And we will draw up a comparison with InGaN/GaN MQW microlasers grown by MBE.References: 1M. Mexis et al., Optics Letters, vol. 36 p.2203 (2011), Sellés et al., APL 109, 231101 (2016) and Sci. Rep. 6, 21650 (2016), 2F. Tabataba-Vakili et al., APL 2017
Databáze: OpenAIRE
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