| Autor: |
Khalid, A., Li, C., Papageogiou, V., Dunn, G. M., Steer, M. J., Thayne, I. G, Kuball, M., Oxley, C. H., Montes, Miguel, Stephen, A., Glover, James, Cumming, D. R. S. |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| DOI: |
10.1109/LED.2012.2224841 |
| Popis: |
We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately −10 dBm at 164 GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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