| Autor: |
Huq, SE, Huang, M, Wilshaw, P, Prewett, P, Korea, E |
| Rok vydání: |
1997 |
| Předmět: |
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| Zdroj: |
IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST 10th International Vacuum Microelectronics Conference. |
| Popis: |
Using state of the art microfabrication techniques including high resolution electron beam lithography and plasma dry etching, uniform arrays of sharp polysilicon field emitters have been fabricated in gated configuration. Emission currents up to 2.5 mu A/tip have been obtained at 90 volts gate bias. Emitter life-time measurements have been carried out under ultra high vacuum conditions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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