Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors
Autor: | Elbeyrouthy, J., Vauthelin, A., Seif, M., Sagnes, Bruno, Pascal, F., Hoffmann, Alain, Valenza, M., Boch, J., Maraine, Tadec, Haendler, Sebastien, Gauthier, Alexis, Chevalier, Pascal, Gloria, Daniel |
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Přispěvatelé: | Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), STMicroelectronics [Crolles] (ST-CROLLES), European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017) |
Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: | |
Zdroj: | RADECS 2019, 30th European Conference on Radiation and its Effects on Components and Systems RADECS 2019, 30th European Conference on Radiation and its Effects on Components and Systems, Sep 2019, Montpellier, France |
Popis: | International audience |
Databáze: | OpenAIRE |
Externí odkaz: |