Effects of Total Ionizing Dose on I-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

Autor: Elbeyrouthy, J., Vauthelin, A., Seif, M., Sagnes, Bruno, Pascal, F., Hoffmann, Alain, Valenza, M., Boch, J., Maraine, Tadec, Haendler, Sebastien, Gauthier, Alexis, Chevalier, Pascal, Gloria, Daniel
Přispěvatelé: Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), STMicroelectronics [Crolles] (ST-CROLLES), European Project: 737454,H2020,H2020-ECSEL-2016-1-RIA-two-stage,TARANTO(2017)
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: RADECS 2019, 30th European Conference on Radiation and its Effects on Components and Systems
RADECS 2019, 30th European Conference on Radiation and its Effects on Components and Systems, Sep 2019, Montpellier, France
Popis: International audience
Databáze: OpenAIRE