| Autor: |
Du, He, Reigosa, Paula Diaz, Iannuzzo, Francesco, Ceccarelli, Lorenzo |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Du, H, Reigosa, P D, Iannuzzo, F & Ceccarelli, L 2018, ' Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules ', Microelectronics Reliability, vol. 88-90, pp. 661-665 . https://doi.org/10.1016/j.microrel.2018.06.039 |
| DOI: |
10.1016/j.microrel.2018.06.039 |
| Popis: |
This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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