Very high efficiency SiGe and GaN High Power Amplifiers for tile modules
| Autor: | Dupuy, Victor, Kerhervé, Eric, Deltimple, Nathalie, Demirel, Nejdat, Mancuso, Yves |
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| Přispěvatelé: | Conception/CSH, Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1-Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, THALES Airborne Systems [Elancourt], THALES, Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)-Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | IEEE IMS 2014 IEEE IMS 2014, Jun 2014, tampa, Florida, United States |
| Popis: | International audience; This presentation will deal with both SiGe and GaN High Power Amplifiers (HPA). Outstanding power levels in X-band are reported in SiGe (more than 3 W) with power added efficiency (PAE) better than 30%, well above previous state of the art. A global design flow dedicated to output power and PAE optimizations will be discussed: it will cover everything from transistor picking and sizing to post-layout simulations. Special focus will be made on power combiners since those are key components to achieve high overall efficiencies. For that purpose a specific methodology will be presented, allowing with great accuracy to synthetize optimal impedance and provide EM model for combiners. Simulation and measurement results will be discussed for both wideband (C-band to Ku band) and X-band circuits. As far as GaN is concerned, an innovative way to combine elementary power cells will be introduced. It has the advantage of drastically reducing MMIC dies size. It consists in vertically stacking the combiner instead of making it planar. While GaN back-ends exhibit a single available routing layer vertically staking combiners seems impractical. However an innovative use of air-bridges allows implementing two layers on top of each other, paving the way to the realization of a balun. The latter can be used as an efficient power combiner. Measurements of a stand-alone balun will be presented for characterization matters, demonstrating its ability to perform power combining over a wide frequency range (C-band to Ku-band). Measurements of an highly compact (with respects to GaN MMICs) 5 W HPA with peak PAE of 50% in C-band using such a balun as power combiner will be presented too. Rising up output power of SiGe power amplifiers and decreasing die size of GaN High Power Amplifiers allow narrowing the gap between these two technologies and can seriously question the interest of GaAs-based High Power Amplifiers MMICs in the close future. |
| Databáze: | OpenAIRE |
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