Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz
| Autor: | Callet, Guillaume, Jardel, Olivier, Sarrazin, Nadège, Morvan, E., Diforte-Poisson, M.A., Oualli, M., Chartier, E., Reveyrand, Tibault, Teyssier, Jean-Pierre, Piotrowicz, S., Quéré, Raymond, Delage, S.L. |
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| Přispěvatelé: | Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, C2S2, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | 18th European Workshop on Heterostructure Technology (HETECH 2009) 18th European Workshop on Heterostructure Technology (HETECH 2009), Nov 2009, Ulm, Germany |
| Popis: | International audience; An intensive electrical characterization of AlInN/GaN HEMT devices is presented in this paper. The performances of these devices based on new material are compared with AlGaN/GaN HEMT devices, thanks to the measurement results and the extraction of small-signal models. Our study is based on 8x75μm devices processed by 3-5 Lab. Load-pull characterizations at 18 GHz will show the advantages of this technology at high frequencies. |
| Databáze: | OpenAIRE |
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