Analysis of the effect of the gate oxide breakdown on SRAM stability
| Autor: | Rodríguez, R., James Stathis, Linder, B. P., Kowalczyk, S., Chuang, C. T., Joshi, R. V., Northrop, G., Bernstein, K., Bhavnagarwala, A. J., Lombardo, S. |
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| Rok vydání: | 2002 |
| Zdroj: | Microelectronics and reliability 42 (2002): 1445–1448. info:cnr-pdr/source/autori:Rodriguez R., Stathis J.H., Linder B.P., Kowalczyk S., Chuang C.T., Joshi R.V., Northrop G., Bernstein K., Bhavnagarwala A.J., Lombardo S./titolo:Analysis of the effect of the gate oxide breakdown on SRAM stability/doi:/rivista:Microelectronics and reliability/anno:2002/pagina_da:1445/pagina_a:1448/intervallo_pagine:1445–1448/volume:42 Scopus-Elsevier |
| Popis: | We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50 microA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on n-FET width. This approach gives targets for tolerable values of leakage caused by gate oxide breakdown. |
| Databáze: | OpenAIRE |
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