Multiple Magnetoionic Regimes in Ta/Co20Fe60B20/ HfO2

Autor: Pachat, R., Ourdani, D., van der Jagt, J. W., Syskaki, M.-A., Di Pietro, A., Roussigné, Y., Ono, S., Gabor, M. S., Chérif, M., Durin, G., Langer, J., Belmeguenai, M., Ravelosona, D., Herrera Diez, L
Přispěvatelé: Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Institut Galilée-Université Sorbonne Paris Cité (USPC)-Centre National de la Recherche Scientifique (CNRS)-Université Sorbonne Paris Nord, Istituto Nazionale di Ricerca Metrologica (INRiM), Central Research Institute of Electrical Power Industry, Technical University of Cluj-Napoca
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Physical Review Applied
Physical Review Applied, American Physical Society, 2021, 15 (6), pp.064055. ⟨10.1103/PhysRevApplied.15.064055⟩
ISSN: 2331-7019
Popis: International audience; In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA → PMA regime is found to be significantly faster than the PMA → IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective damping parameter also shows a marked dependence with gate voltage in the IPA → PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA → IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices.
Databáze: OpenAIRE