Band gap reduction in InNxSb1-x alloys : optical absorption, k · P modeling, and density functional theory
| Autor: | Linhart, WM, Rajpalke, MK, Buckeridge, J, Murgatroyd, PAE, Bomphrey, JJ, Alaria, J, Catlow, CRA, Scanlon, DO, Ashwin, MJ, Veal, TD |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | APPLIED PHYSICS LETTERS |
| ISSN: | 0003-6951 1077-3118 |
| Popis: | Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N, a reduction of ∼79 meV/%N. The experimentally observed band gap reduction in molecular-beam epitaxial InNSb thin films is reproduced by a five band k ⋅· P band anticrossing model incorporating a nitrogen level, EN, 0.75 eV above the valence band maximum of the host InSb and an interaction coupling matrix element between the host conduction band and the N level of β = 1.80 eV. This observation is consistent with the presented results from hybrid density functional theory. |
| Databáze: | OpenAIRE |
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