Design of radiation-hard CMOS sensors for particle detection applications
| Autor: | Berdalović, Ivan |
|---|---|
| Přispěvatelé: | Suligoj, Tomislav |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Active pixel sensors
poluvodički detektori Active pixel sensors CMOS integrated circuits position sensitive particle de- tectors radiation effects radiation hardening (electronics) semiconductor detectors solid-state circuit design Elektrotehnika Physics::Instrumentation and Detectors efekti zračenja detektori čestica osjetljivi na položaj udc:621.3(043.3) CMOS integrated circuits position sensitive particle detectors radiation hardening (electronics) solid-state circuit design semiconductor detectors otpornost (elektronike) na zračenje Electrical engineering CMOS integrirani sklopovi radiation effects TECHNICAL SCIENCES. Computing. Program Engineering Detectors and Experimental Techniques Aktivni piksel senzori TEHNIČKE ZNANOSTI. Računarstvo. Programsko inženjerstvo projektiranje poluvodičkih sklopova |
| Popis: | The work focuses on the design of large-scale radiation-hard monolithic CMOS sensors for the upgrades of the detectors in the high-energy physics experiments at CERN. The sensors are manufactured using a novel process modification implemented in the TowerJazz 180 nm CMOS process, which uses small collection electrodes to achieve a low sensor capacitance in the order of a few femtofarads, resulting in low noise and low analogue power consumption. The process modification provides full depletion of the sensitive layer and a radiation hardness promising to meet the requirements of the pixel detectors in CERN’s largest experiments. The sensors implement a matrix of small pixels (in the order of 30 micrometres) containing a fast, low-noise front-end amplifier and a novel asynchronous digital readout architecture. Measurement results from these sensors before and after irradiation are also discussed. Rad se bavi projektiranjem monolitnih CMOS senzora otpornih na zračenje za primjenu u detektorima u eksperimentima fizike elementarnih čestica u CERN-u. Senzori su proizvedeni u novoj modifikaciji standardnog TowerJazz 180 nm CMOS procesa te koriste male sakupljačke elektrode kako bi se postigao mali kapacitet reda veličine nekoliko femtofarada, što omogućuje niske razine šuma i nisku analognu disipaciju snage. Modifikacija procesa omogućuje potpuno osiromašenje sloja za detekciju i time otpornost na zračenje koja može ispuniti zahtjeve piksel detektora u najvećim CERN-ovim eksperimentima. Senzori sadrže matricu malih piksela (reda veličine 30 mikrometara) koji osim sakupljačke elektrode sadrže brzo niskošumno pojačalo i novu asinkronu digitalnu logiku za očitavanje podataka iz piksela. Rad će također predstaviti rezultate mjerenja na proizvedenim sklopovima prije i poslije zračenja. |
| Databáze: | OpenAIRE |
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