XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
| Autor: | Gómez Hernández, Víctor Jesús, Gacevic, Zarko, Aseev, Pavel, Soto Rodríguez, Paul, Kumar, Praveen, Calleja Pardo, Enrique, Nötzel, Richard, Sánchez García, Miguel Ángel |
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| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | International Workshop on Nitride Semiconductors (IWN2014) | International Workshop on Nitride Semiconductors (IWN2014) | 24/08/2014-29/08/2014 | Wroclaw, Poland Archivo Digital UPM Universidad Politécnica de Madrid |
| Popis: | The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas. |
| Databáze: | OpenAIRE |
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