Soft X-ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface
| Autor: | Mezher, M, Garris, R, Mansfield, LM, Blum, M, Hauschild, D, Horsley, K, Duncan, DA, Yang, W, Bär, M, Weinhardt, L, Ramanathan, K, Heske, C |
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| Rok vydání: | 2016 |
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| Zdroj: | ACS applied materials & interfaces, vol 8, iss 48 Mezher, M; Garris, R; Mansfield, LM; Blum, M; Hauschild, D; Horsley, K; et al.(2016). Soft X-ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2Interface. ACS Applied Materials and Interfaces, 8(48), 33256-33263. doi: 10.1021/acsami.6b09245. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/9zf3r91v |
| DOI: | 10.1021/acsami.6b09245. |
| Popis: | © 2016 American Chemical Society. The chemical structure of the Zn(O,S)/Cu(In,Ga)Se2interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se2interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se2devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S - In and/or S - Ga bonds at or close to the interface. |
| Databáze: | OpenAIRE |
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