Spontaneous atomic ordering of dilute GaAsBi bismides: Structural and optical study
| Autor: | Paulauskas, T, Čechavičius, B, Karpus, V, Jočionis, L, Tumėnas, S, Devenson, J, Pačebutas, V, Stanionytė, S, Strazdienė, V, Geižutis, A, Čaplovičová, M, Vretenár, V, Walls, M, Kociak, M, Krotkus, A |
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| Přispěvatelé: | Center for Physical Sciences and Technology [Vilnius] (FTMC), Centre National de la Recherche Scientifique (CNRS), Walls, Michael |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| Zdroj: | Journal of Apllied Physics Journal of Apllied Physics, 2020 |
| Popis: | International audience; The investigated dilute GaAs 1-x Bi x (x = 0.034-0.052) bismides have been MBE-grown on exact and low-angle offcut (001) GaAs as well as on (001) Ge substrates. Atomic-resolution scanning transmission electron microscopy and X-ray diffraction measurements show the presence of spontaneous CuPt B-type ordering in all the bismide samples. The ordering lifts the valence band degeneracy and induces the optical polarization anisotropy, which manifests in photoluminescence and transmittance spectra of the bismides samples, and is also confirmed by birefringence and linear dichroism measurements. The ordering-induced valence band splitting in dilute GaAs 1-x Bi x is estimated to be much larger than that in the conventional III-V semiconductor alloys (e.g. GaInP). |
| Databáze: | OpenAIRE |
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