Modeling the Imaginary Branch in III-V Tunneling Devices: Effective Mass vs k · p

Autor:	Alper, Cem, Visciarelli, Michele, Palestri, Pierpaolo, Padilla, Jose L., Gnudi, Antonio, Gnani, Elena, Ionescu, Adrian M.
Přispěvatelé:	Alper, Cem, Visciarelli, Michele, Palestri, Pierpaolo, Padilla, Jose L., Gnudi, Antonio, Gnani, Elena, Ionescu, Adrian M.
Jazyk:	angličtina
Rok vydání:	2015
Předmět:	Modeling and Simulation Computer Science Applications1707 Computer Vision and Pattern Recognition Electrical and Electronic Engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Popis:	In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics. © 2015 IEEE.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6f154866191fd217492534803ed339dc http://hdl.handle.net/11390/1070372 Zobrazit plný text záznamu