Ultrafast valley-resolved carrier dynamics in group IV semiconductors

Autor:	Zürch, M, Chang, HT, Borja, LJ, Kraus, PM, Cushing, SK, Gandman, A, Kaplan, CJ, Oh, MH, Prell, JS, Prendergast, D, Pemmaraju, CD, Neumark, DM, Leone, SR
Rok vydání:	2018
Předmět:	Condensed Matter::Materials Science Physics::Atomic and Molecular Clusters Physics::Optics Physics::Atomic Physics Physics::Chemical Physics
Popis:	Attosecond transient absorption spectroscopy at the M4,5-edge of Ge following ultrafast photoexcitation reveals valley-resolved hot electron and hole relaxation, carrier recombination and trapping in Ge and Si-Ge alloy in unprecedented clarity and simultaneously.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::68c7c06ea4608d57b756cb622f533ccc https://escholarship.org/uc/item/5bx3p90s Zobrazit plný text záznamu