Sequential phase formation by ion-induced epitaxy in fe-implanted si(001)
| Autor: | Behar, Moni, Bernas, H., Desimoni, Judith, Lin, X.W., Maltez, Rogério Luis |
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| Jazyk: | angličtina |
| Rok vydání: | 1995 |
| Předmět: | |
| Zdroj: | Repositório Institucional da UFRGS Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
| Popis: | Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of y-FeSi2, α-FeSi2 and β-FeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the y-a and α-β phase transitions were determined as ≈ 11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases. |
| Databáze: | OpenAIRE |
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