Atomically thin boron nitride: a tunnelling barrier for graphene devices
| Autor: | Britnell, Liam, Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Katsnelson, M. I., Eaves, L., Morozov, S. V., Mayorov, Alexander S., Peres, N. M. R., Castro Neto, A. H., Leist, J., Geim, A. K., Ponomarenko, L. A., Novoselov, K. S. |
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| Přispěvatelé: | Universidade do Minho |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | Repositório Científico de Acesso Aberto de Portugal Repositório Científico de Acesso Aberto de Portugal (RCAAP) instacron:RCAAP |
| Popis: | We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel. |
| Databáze: | OpenAIRE |
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