Post-stress/breakdown leakage mechanism in ultrathin high-K (HfO 2)(SiO2)1-x,(SiO2) gatestacks: A nanoscale conductive-atomic force microscopy c-afm

Autor:	Uppal, H. J., Markevich, V., Volkos, S. N., Dimoulas, A., Hamilton, B., Anthony Peaker
Zdroj:	Scopus-Elsevier
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::622c03f4249f4e555209a591ac4366bf http://www.scopus.com/inward/record.url?eid=2-s2.0-70349280021&partnerID=MN8TOARS Zobrazit plný text záznamu