Low-temperature IGZO TFT backplane and its application in flexible AMOLED displays on ultrathin polymer films
Autor: | Steen, J.L.P.J. van der, Tripathi, A.K., Maas, J.P.V., Diesen-Tempelaars, K. van, Leuken, L.B. van, Haas,G.J.A.J.F. de, Putten, J.B.P.H. van der, Yakimets, I., Li, F.M.W., Ellis, T.H., Mol,A.M.B. van, Gelinck, G.H., Myny,K., Vicca, P., Smout, S., Ameys, M., Huei Ke, T., Steudel, S., Nag, M., Schols, S., Genoe, J., Heremans, P., Fukui, Y., Green, S. |
---|---|
Přispěvatelé: | Molecular Materials and Nanosystems |
Jazyk: | angličtina |
Rok vydání: | 2013 |
Předmět: | |
Zdroj: | 20th International Display Workshops 2013, IDW 2013, 2, 1568-1569 Proceedings of the International Display Workshops, 20, 1568-1596 |
Popis: | We present a low-temperature metal oxide transistor backplane technology using PECVD dielectrics. We show successful integration of the backplane in flexible 200ppi AMOLED displays on ultrathin polymer films. The displays are encapsulated with a thin-film barrier and the total stack thickness is less than 150μm. |
Databáze: | OpenAIRE |
Externí odkaz: |