Low-temperature IGZO TFT backplane and its application in flexible AMOLED displays on ultrathin polymer films

Autor:	Steen, J.L.P.J. van der, Tripathi, A.K., Maas, J.P.V., Diesen-Tempelaars, K. van, Leuken, L.B. van, Haas,G.J.A.J.F. de, Putten, J.B.P.H. van der, Yakimets, I., Li, F.M.W., Ellis, T.H., Mol,A.M.B. van, Gelinck, G.H., Myny,K., Vicca, P., Smout, S., Ameys, M., Huei Ke, T., Steudel, S., Nag, M., Schols, S., Genoe, J., Heremans, P., Fukui, Y., Green, S.
Přispěvatelé:	Molecular Materials and Nanosystems
Jazyk:	angličtina
Rok vydání:	2013
Předmět:	TS - Technical Sciences Industrial Innovation SDG 3 - Good Health and Well-being Displays Science AMOLED Metal-Oxide semiconductors HOL - Holst Mechatronics Mechanics & Materials Flexible Low-temperature
Zdroj:	20th International Display Workshops 2013, IDW 2013, 2, 1568-1569 Proceedings of the International Display Workshops, 20, 1568-1596
Popis:	We present a low-temperature metal oxide transistor backplane technology using PECVD dielectrics. We show successful integration of the backplane in flexible 200ppi AMOLED displays on ultrathin polymer films. The displays are encapsulated with a thin-film barrier and the total stack thickness is less than 150μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5ee30d3f15655f8783238d1bac2708a2 http://resolver.tudelft.nl/uuid:15613ade-8eb8-44ac-8e0d-e910ec3445f6 Zobrazit plný text záznamu