Piezoresistance in nano-silicon
| Autor: | Alistair Rowe, Arscott, S., Jeffrey Mccallum, Brett Johnson, Christopher Lew, Heng Li, Abel Thayil, Marcel FILOCHE |
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| Přispěvatelé: | École polytechnique (X), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Nano and Microsystems - IEMN (NAM6 - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), University of Melbourne, Université catholique de Lille (UCL)-Université catholique de Lille (UCL) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | APS March Meeting 2021 APS March Meeting 2021, Mar 2021, Virtual, United States HAL |
| Popis: | International audience; Piezoresistance (PZR) in nano-silicon has long promised to provide a means to sensitively transduce motion in nano-electromechanical systems. Giant or anomalous effects loosely ascribed tomechanically sensitive electronic defects have been reported in lightly doped nano-objects. On the basis of two recent works [1, 2] a quantitative description of the piezoresponse of trap-mediated, space-charge-limited transport will be given. Using silicon nano-membranes containing both native and engineered defects, it will be shown that under steady-state conditions the magnitude of the piezoresistance is always comparable to that of charge-neutral, bulk silicon although a sign change can be induced under bipolar conditions due to stress-induced shifts in the trap activation energies. Under non-steady-state conditions, this same shift in trap activation energies can yield a giant piezoresponse at measurement frequencies close to the characteristic trapping rates. In terms of possible nano-sensing applications, the difficulties likely to be encountered when trying to exploit this giant piezo-impedance will be discussed. |
| Databáze: | OpenAIRE |
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