4H-SIC p-type doping determination from secondary electrons imaging

Autor:	Kayambaki, M, Makris, N., Tsagarakis, K., Peyre, Hervé, Stavrinidis, A, Zekentes, K.
Přispěvatelé:	Institute of Electronic Structure and Laser (FORTH-IESL), Foundation for Research and Technology - Hellas (FORTH), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	[CHIM.MATE]Chemical Sciences/Material chemistry [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph] [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics [SPI.MAT]Engineering Sciences [physics]/Materials
Zdroj:	12th European Conference on Silicon Carbide and Related Materials (ECSCRM) 12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham, United Kingdom
Popis:	session poster: MO.P.FP14; International audience
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::528a0d5b3e7545608ac7fa10b4899ea8 https://hal.archives-ouvertes.fr/hal-02066375 Zobrazit plný text záznamu