Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates
Autor: | SCACCABAROZZI, ANDREA, BINETTI, SIMONA OLGA, ACCIARRI, MAURIZIO FILIPPO, Isella, G, Campesato, R, Gori, G, Casale, M, Mancarella, F, Noack, M, von Känel, H, MIGLIO, LEONIDA |
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Přispěvatelé: | Scaccabarozzi, A, Binetti, S, Acciarri, M, Isella, G, Campesato, R, Gori, G, Casale, M, Mancarella, F, Noack, M, von Känel, H, Miglio, L |
Jazyk: | angličtina |
Rok vydání: | 2016 |
Předmět: |
Sustainability and the Environment
Renewable Energy Sustainability and the Environment Electronic Optical and Magnetic Material monolithic integration multi-junction solar cells silicon integration substrate patterning Electronic Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Condensed Matter Physic multi-junction solar cell CHIM/02 - CHIMICA FISICA FIS/01 - FISICA SPERIMENTALE Electronic Optical and Magnetic Materials Renewable Energy FIS/03 - FISICA DELLA MATERIA |
Zdroj: | Progress in photovoltaics 24 (2016): 1368–1377. doi:10.1002/pip.2798 info:cnr-pdr/source/autori:Scaccabarozzi, Andrea; Binetti, Simona; Acciarri, Maurizio; Isella, Giovanni; Campesato, Roberta; Gori, Gabriele; Casale, Maria Cristina; Mancarella, Fulvio; Noack, Michael; von Känel, Hans; Miglio, Leo/titolo:Integration of InGaP%2FGaAs%2FGe triple-junction solar cells on deeply patterned silicon substrates/doi:10.1002%2Fpip.2798/rivista:Progress in photovoltaics (Print)/anno:2016/pagina_da:1368/pagina_a:1377/intervallo_pagine:1368–1377/volume:24 |
DOI: | 10.1002/pip.2798 |
Popis: | We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasma-enhanced chemical vapor deposition, provide good efficiency and spectral response, despite the small thickness of the Ge epilayers and a threading dislocation density as large as 107/cm2. The presence of microcracks generated by the thermal misfit is compensated by a dense collection grid that avoids insulated areas. In order to avoid the excessive shadowing introduced by the use of a dense grid, the crack density needs to be lowered. Here, we show that deep patterning of the Si substrate in blocks can be an option, provided that a continuous Ge layer is formed at the top, and it is suitably planarized before the metalorganic chemical vapor deposition. The crack density is effectively decreased, despite that the efficiency is also lowered with respect to unpatterned devices. The reasons of this efficiency reduction are discussed, and a strategy for improvement is proposed and explored. Full morphological analysis of the coalesced Ge blocks is reported, and the final devices are tested under concentrated AM1.5D spectrum. Copyright © 2016 John Wiley & Sons, Ltd. |
Databáze: | OpenAIRE |
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