Autor:	Peter R Wilshaw, Konkol, A., Booker, G. R.
Jazyk:	angličtina
Rok vydání:	2016
Zdroj:	Scopus-Elsevier
Popis:	An outline is given of a method for high resolution BSE analysis of chemical composition across interfaces in bulk semiconductor specimens. In this method the effects of electron beam diameter and beam spreading, which normally limit spatial resolution, are largely removed by a deconvolution technique in which these effects are measured experimentally. Line profiles giving 10-90% interface widths as low as 19nm have been obtained at 30kV from an abrupt interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4d71f21043b3e6f1e396f17a108e3645 https://ora.ox.ac.uk/objects/uuid:0b5ccc01-140f-4275-b713-febb5e22c234 Zobrazit plný text záznamu