The effect of ketone defects on the charge transport and charge recombination in polyfluorenes

Autor: Kuik, M., Wetzelaer, G.-J.A.H., Laddé, J.G., Nicolai, H.T., Wildeman, J., Sweelssen, J., Blom, P.W.M.
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: Advanced Functional Materials, 23, 21, 4502-4509
Popis: The effect of on-chain ketone defects on the charge transport of the polyfluorene derivative poly(9,9-dioctylfluorene) (PFO) is investigated. Using MoO3 as ohmic hole contact, the hole transport in a pristine PFO diode is observed to be limited by space-charge, whereas fluorenone contaminated PFO (PFO-F) is shown to be trap limited by the occurrence of an exponential trap distribution with a trap depth of 0.18 eV. The electron transport in PFO is also observed to be trap limited, but in order to describe the electron transport of PFO-F, an additional trap level with a depth of 0.46 eV must be introduced. The obtained energy levels of the fluorenone trapping sites are in close agreement with cyclic voltammetry (CV) measurements reported in literature. As a result, the fluorenone defects are shown to simultaneously act as hole- and electron trap. Moreover, through ideality factor measurements, the green emission associated with these defects is observed to originate from trap-assisted recombination. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Databáze: OpenAIRE