Boron diffused emitters passivated with Al2O3 films
| Autor: | Masmitjà Rusiñol, Gerard, Ortega Villasclaras, Pablo Rafael, López Rodríguez, Gema, Calle Martín, Eric, García Molina, Francisco Miguel, Martín García, Isidro, Orpella García, Alberto, Voz Sánchez, Cristóbal, Alcubilla González, Ramón |
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| Přispěvatelé: | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
| Předmět: |
Electron devices
Passivation Solar cells Silicon Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors [Àrees temàtiques de la UPC] Atomic layer deposition Silicones Physics::Accelerator Physics Bor Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica [Àrees temàtiques de la UPC] Silicon wafers Boron |
| Zdroj: | Recercat. Dipósit de la Recerca de Catalunya instname UPCommons. Portal del coneixement obert de la UPC Universitat Politècnica de Catalunya (UPC) |
| Popis: | In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation. |
| Databáze: | OpenAIRE |
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