Effect of ion dose and annealing mode on the photoluminescence from SiO2-layers implanted with Si-ions

Autor:	Kachurin, G. A., Leier, A. F., Zhuravlev, K. S., Tyschenko, I. E., Gutakovsky, A. K., Volodin, V. A., Yankov, R. A., Skorupa, W.
Jazyk:	angličtina
Rok vydání:	1998
Zdroj:	11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam,The Netherlands, Aug. 31-Sept. 4, 1998 Phys. Techn. Semiconductors (in Russian) 32 (1998) 1371
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::48e3c8f3fd08d19c79b47a8b8437ebef https://www.hzdr.de/publications/Publ-2156-2 Zobrazit plný text záznamu