Temperature impact (up to 200°C) on performance and reliability of HfO2-based RRAMs

Autor: Cabout, T., Perniola, L., Jousseaume, V., Grampeix, H., Nodin, J.F., Toffoli, A., Guillermet, M., Jalaguier, E., Vianello, E., Molas, G., Reimbold, G., de Salvo, B., Diokh, T., Candelier, P., Pirrotta, O., Padovani, A., Larcher, L., Bocquet, Marc, Muller, Christophe
Přispěvatelé: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Università degli Studi di Modena e Reggio Emilia (UNIMORE), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia (UNIMORE)
Jazyk: angličtina
Rok vydání: 2013
Předmět:
Zdroj: 2013 5th IEEE International Memory Workshop (IMW)
2013 5th IEEE International Memory Workshop (IMW), May 2013, Monterey, United States. ⟨10.1109/IMW.2013.6582112⟩
Popis: International audience; This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data retention and endurance. HfO 2-RRAM devices (in a 1T1R configuration) integrated in an advanced 65 nm technology are studied for this aim. We show that forming operation is strongly activated in temperature (i.e.-0.5 V per hundred Celsius degree), being much less for SET and RESET voltages (i.e.
Databáze: OpenAIRE
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