Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence

Autor:	Corfdir, P., Lefebvre, P., Ristic, J., Dussaigne, A., Sonderegger, S., Martin, D., Ganiere, J.-D., Grandjean, N., Deveaud-Pledran, B.
Přispěvatelé:	Lefebvre, Pierre, Institute of Condensed Matter Physics [Lausanne], Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de Photonique et d'Electronique Quantiques
Jazyk:	angličtina
Rok vydání:	2009
Předmět:	[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Zdroj:	Int. Conf. On Optics of Excitons in Confined Systems-OECS11. Int. Conf. On Optics of Excitons in Confined Systems-OECS11., Sep 2009, Madrid, Spain
Popis:	International audience; We examine the capture dynamics of excitons by basal stacking faults in a-plane GaN by using time-resolved CL.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::40393e900785bdac7f629af7522d1f11 https://hal.archives-ouvertes.fr/hal-00797193 Zobrazit plný text záznamu