Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices

Autor:	Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, González Ossorio, Óscar, Domínguez, Leidy Azucena, García García, Héctor, Kalam, Kristjan, Kukli, Kaupo, Ritala, Mikko, Leskelä, Markku
Přispěvatelé:	Department of Chemistry, Mikko Ritala / Principal Investigator
Jazyk:	angličtina
Rok vydání:	2017
Předmět:	admittance memory cycles 116 Chemical sciences Momorias resistivas Ta2O5:ZrO2 ALD films 114 Physical sciences Resistive memories
Popis:	Producción Científica The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermediate states between the high and low resistance ones was achieved, demonstrating suitability to analog and neuromorphic applications. Admittance memory cycles provide relevant information about the switching mechanism, in which the existence of two different metallic species in the dielectric seems to play an important role. Spanish TEC2014 (grant 52152-C3-3-R)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3ffdf57701fd03a591911a89e04f26d2 http://hdl.handle.net/10138/310756 Zobrazit plný text záznamu