Charge model of four-terminal 2D semiconductor FETs

Autor:	Pasadas, Francisco, Jimenez, David, González Marín, Enrique, García Ruiz, Francisco Javier, Godoy Medina, Andrés
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	Computer Science::Emerging Technologies Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS Hardware_PERFORMANCEANDRELIABILITY Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Zdroj:	Digibug. Repositorio Institucional de la Universidad de Granada instname
Popis:	A charge model for four-terminal two-dimensional (2D) semiconductor based field-effect transistors (FETs) is proposed. The model is suitable for describing the dynamic response of these devices under time-varying terminal voltage excitations. This work has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No GrapheneCore2 785219, and from Ministerio de Economía y Competitividad under GrantsTEC2015-67462-C2-1-Rand TEC2017-89955-R(MINECO/FEDER).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3cccbea336a01c98eccd5f64e05dc474 http://hdl.handle.net/10481/58483 Zobrazit plný text záznamu