Investigation of silicon oxynitride structure obtained by an ion implantation of O2+ and N2+ in Si(100)

Autor:	Oleksandr Bondarchuk, Goysa, S. N., Gonchar, N. N., Koval, I. F., Nakhodkin, N. G.
Zdroj:	Scopus-Elsevier CIÊNCIAVITAE
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2e98d204f9b455eee746a38a9f74639d http://www.scopus.com/inward/record.url?eid=2-s2.0-57749089002&partnerID=MN8TOARS Zobrazit plný text záznamu