Copper line topology impact on the reliability of SiOCH low-k dielectrics for the advanced 45nm technology node and

Autor:	Vilmay, M., Roy, Daniel, Monget, C., Volpi, F., Chaix, J.M.
Přispěvatelé:	Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Jazyk:	angličtina
Rok vydání:	2008
Předmět:	[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering [CHIM.MATE]Chemical Sciences/Material chemistry ComputingMilieux_MISCELLANEOUS
Zdroj:	xxx Integrated Reliability Workshop (IRW 2008) Integrated Reliability Workshop (IRW 2008), 2008, United States
Popis:	International audience
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::296acfc1c59a9535eb5a39ccc45d0695 https://hal.archives-ouvertes.fr/hal-00386235 Zobrazit plný text záznamu