An SRAM-Based Radiation Monitor With Dynamic Voltage Control in 0.18- $\mu$ m CMOS Technology
| Autor: | Jeffrey Prinzie, Sam Thys, Bjorn Van Bockel, Jialei Wang, Valentijn De Smedt, Paul Leroux |
|---|---|
| Jazyk: | angličtina |
| Předmět: | |
| Zdroj: | IEEE Transactions on Nuclear Science |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2018.2885693 |
| Popis: | © 1963-2012 IEEE. This paper presents a novel radiation monitor that is based on a custom static random access memory (SRAM) application-specified integrated circuit. Its sensitivity is adjustable through its core supply voltage and the radiation monitoring is based on the upset rate that is measured during a measurement interval in the memory. The sensor has different supply voltages for the SRAM core and the interface logic to prevent incorrect digital signals during the measurement cycle. The memory was processed in a 0.18-μm CMOS technology and was tested with heavy ions with an linear energy transfer from 1.8-60 MeV · cm2/mg, 24-GeV protons, and a mixed radiation field. The memory cells were also verified with a two-photon absorption laser. Furthermore, an analysis was made on single-event upsets and multibit upsets. ispartof: IEEE TRANSACTIONS ON NUCLEAR SCIENCE vol:66 issue:1 pages:282-289 ispartof: location:Kona, HI status: published |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|