Combined aberration-corrected STEM and synchrotron nano-diffraction for crystal phase engineering in GaAs nanowires
| Autor: | Dursap, Thomas, Vettori, Marco, Botella, Claude, Regreny, Philippe, Blanchard, Nicholas, Dupraz, M., Zhou, T., Holt, M. V., Labat, Stéphane, Thomas, Olivier, Richard, Marie-Ingrid, Danescu, Alexandre, Bugnet, Matthieu, Penuelas, Jose |
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| Přispěvatelé: | INL - Matériaux Fonctionnels et Nanostructures (INL - MFN), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), European Synchroton Radiation Facility [Grenoble] (ESRF), Argonne National Laboratory [Lemont] (ANL), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Chauvin, Nicolas |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Nanowire Week 2022 Nanowire Week 2022, Apr 2022, Chamonix, France |
| Popis: | International audience; III-V semiconductor nanowires (NXs) obtained by the vapor-liquid-solid (VLS) mechanism exhibit a zinc-blende (ZB) or a wurtzite (WZ) structure [1] depending on the growth conditions, and more particularly on the amount of III and V element fluxes [2]. Controlling precisely the growth of the crystal phases of self-assisted GaAs NWs by molecular beam epitaxy (MBE) would be an important achievement for device applications [3]. Nevertheless, the optimized growth of WZ segments in NW geometry is still in its infancy, and major achievements have been reported only very recently [4-6]. Optimizing the growth of each crystal phase thus appears necessary to better understand the correlation between the nanostructures and the properties of the NWs.In this work, we investigate the stress relaxation and strains induced by controlled phase changes in the NW, using the high reciprocal space resolution of the synchrotron nano-diffraction. We combined this technique with aberration-corrected scanning transmission electron microscopy (STEM) and dark-field transmission electron microscopy (DF-TEM) analysis performed on the same isolated NW and using the same diffraction spots as for the nano-diffraction. The combination of the synchrotron and the TEM analysis performed on the same NW precisely highlight the contribution of the ZB variants, the WZ structure and the stacking faults on the stress relaxation and strains observed in the NW. |
| Databáze: | OpenAIRE |
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