Impact of leakage currents on voltage sharing in series connected SiC Power MOSFETs and silicon IGBT devices

Autor:	Davletzhanova, Z., Olayiwola Alatise, Bonyadi, R., Gonzalez, J. O., Chan, C. W., Bonyadi, Y., Jennings, M., Mawby, P.
Zdroj:	Scopus-Elsevier
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::23e7893c19b58a21f20efa3af9ba69ae http://www.scopus.com/inward/record.url?eid=2-s2.0-85057042641&partnerID=MN8TOARS Zobrazit plný text záznamu