A 310°/3.6dB K-band phaseshifter using paraelectric BST thin films
| Autor: | Vélu, G., Blary, K., Burgnies, L., Carru, J.C., Delos, E., Marteau, A., Lippens, D. |
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| Přispěvatelé: | Laboratoire d'Etude des Matériaux et des Composants pour l'Electronique (LEMCEL), Université du Littoral Côte d'Opale (ULCO), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: | |
| Zdroj: | IEEE Microwave and Wireless Components Letters IEEE Microwave and Wireless Components Letters, 2006, 16 (2), pp.87-89. ⟨10.1109/LMWC.2005.863198⟩ IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers, 2006, 16, pp.87-89 |
| ISSN: | 1531-1309 1558-1764 |
| Popis: | International audience; Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310/spl deg/ phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85/spl deg//dB. |
| Databáze: | OpenAIRE |
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