Silicon-based single quantum dot emission in the telecoms C‑band

Autor: Orchard, Jonathan R., Woodhead, Chris, Wu, Jiang, Tang, Mingchu, Beanland, Richard, Noori, Yasir, Liu, Huiyun, Young, Robert J., Mowbray, David J.
Jazyk: angličtina
Rok vydání: 2017
ISSN: 2330-4022
DOI: 10.1021/acsphotonics.7b00276
Popis: We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.
Databáze: OpenAIRE