New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures

Autor:	Bellodi, Marcello, Joao Antonio Martino, Flandre, Denis
Zdroj:	Scopus-Elsevier
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::19927bc9804aff13f532f9d5d80f1cf3 http://www.scopus.com/inward/record.url?eid=2-s2.0-0029678896&partnerID=MN8TOARS Zobrazit plný text záznamu