The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

Autor:	Kachurin, G. A., Vladimir Volodin, Tetel Baum, D. I., Marin, D. V., Leier, A. F., Gutakovskii, A. K., Cherkov, A. G., Mikhailov, A. N.
Zdroj:	Scopus-Elsevier
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::19386d23c5ccc1caf0d4e4f56560691f http://www.scopus.com/inward/record.url?eid=2-s2.0-24044462653&partnerID=MN8TOARS Zobrazit plný text záznamu